Publicaciones del IMSE

Encontrados resultados para:

Autor: Pablo Sarazá Canflanca
Año: Desde 2002

Artículos de revistas


Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs
P. Saraza-Canflanca, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · IEEE Transactions on Electron Devices, vol 69, no. 10, pp 5424-5429, 2022
resumen      doi      

The origin of some time-dependent variability phenomena in FET technologies has been attributed to the charge carrier trapping/detrapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from the so-called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. This article presents a detailed strategy aimed at determining the defect time constant distribution, specifically tailored for small area devices, using data obtained from conventional characterization procedures.

On the impact of the biasing history on the characterization of Random Telegraph Noise
P. Saraza-Canflanca, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · IEEE Transactions on Instrumentation and Measurement, vol. 71, article 2003410, 2022
resumen      doi      

Random Telegraph Noise is a time-dependent variability phenomenon that has gained increased attention during the last years, especially in deeply-scaled technologies. In particular, there is a wide variety of works presenting different techniques designed to analyze current traces in scaled FET devices displaying Random Telegraph Noise, and others focused on modeling the phenomenon using the parameters extracted through such techniques. However, very little attention has been paid to the effects that the biasing conditions of the transistors prior to the measurements may have on the extraction of the parameters that characterize this phenomenon. This paper investigates how these biasing conditions actually impact the extracted results. Specifically, it is demonstrated that the results obtained when Random Telegraph Noise is measured immediately after the device is biased may lead to an overestimation of the Random Telegraph Noise impact with respect to situations in which the device has been previously biased for some time. This fact is, first, presented from a theoretical point of view, and, after, demonstrated experimentally through measurements obtained from a CMOS-transistor array.

A DRV-based bit selection method for SRAM PUF key generation and its impact on ECCs
A. Santana-Andreo, P. Saraza-Canflanca, H. Carrasco-Lopez, P. Brox, R. Castro-Lopez, E. Roca and F.V. Fernandez
Journal Paper · Integration, vol. 85, pp 1-9, 2022
resumen      doi      

PUFs based on the power-up values of an array of SRAM cells are a popular solution to provide secure and low-cost key generation suitable for IoT devices. However, SRAM cells do not always power up to the same value due to external factors like noise, temperature, or aging. This results in a decrease of reliability for the SRAM PUF, an issue generally solved by employing complex Error Correction Codes (ECCs). However, ECCs significantly increase the cost of the complete system. A way to alleviate this issue is the use of bit selection methods, which increase the reliability of the SRAM PUF by using only the power-up values of the most reliable cells (i.e., the SRAM cells that consistently power up to the same value). In this work, the reduction in ECC complexity through a bit selection method based on the Data Retention Voltage metric is demonstrated.

Unified RTN and BTI statistical compact modeling from a defect-centric perspective
G. Pedreira, J. Martin-Martinez, P. Saraza-Canflanca, R. Castro-Lopez, R. Rodriguez, E. Roca, F.V. Fernandez and M. Nafria
Journal Paper · Solid-State Electronics, vol. 185, article 108112, 2021
resumen      doi      pdf

In nowadays deeply scaled CMOS technologies, time-dependent variability effects have become important concerns for analog and digital circuit design. Transistor parameter shifts caused by Bias Temperature Instability and Random Telegraph Noise phenomena can lead to deviations of the circuit performance or even to its fatal failure. In this scenario extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at near threshold, nominal and accelerated aging conditions. Statistical modelling of RTN and BTI combined effects covering the full voltage range is presented. The results of this work suppose a complete modelling approach of BTI and RTN that can be applied in a wide range of voltages for reliability predictions.

Statistical Characterization of Time-Dependent Variability Defects using the Maximum Current Fluctuation
P. Saraza-Canflanca, J. Martin-Martinez, R. Castro-Lopez, E. Roca, R. Rodriguez, F.V. Fernandez and M. Nafria
Journal Paper · IEEE Transactions on Electron Devices, vol. 68, no. 8, pp 4039-4044, 2021
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This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology.

Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
J. Diaz-Fortuny, P. Saraza-Canflanca, R. Rodriguez, J. Martin-Martinez, R. Castro-Lopez, E. Roca, F.V.Fernandez and M. Nafria
Journal Paper · Solid-State Electronics, vol. 185, article 108037, 2021
resumen      doi      pdf

In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have become important concerns for analog and digital circuit design. For instance, transistor parameter shifts caused by Bias Temperature Instability and Hot-Carrier Injection phenomena can lead to progressive deviations of the circuit performance or even to its catastrophic failure. In this scenario, and to understand the effects of these variability sources, an extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models and simulation tools needed to achieve reliable integrated circuits. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at nominal and accelerated aging conditions. To this end, a versatile transistor array chip and a flexible measurement setup have been used to reduce the required testing time to attainable values.

Improving the reliability of SRAM-based PUFs under varying operation conditions and aging degradation
P. Saraza-Canflanca, H. Carrasco-Lopez, A. Santana-Andreo, P. Brox, R. Castro-Lopez, E. Roca and F.V. Fernandez
Journal Paper · Microelectronics Reliability, vol. 118, article 114049, 2021
resumen      doi      pdf

The utilization of power-up values in SRAM cells to generate PUF responses for chip identification is a subject of intense study. The cells used for this purpose must be stable, i.e., the cell should always power-up to the same value (either ‘0’ or ‘1’). Otherwise, they would not be suitable for the identification. Some methods have been presented that aim at increasing the reliability of SRAM PUFs by identifying the strongest cells, i.e., the cells that more consistently power-up to the same value. However, these methods present some drawbacks, in terms of either their practical realization or their actual effectiveness in selecting the strongest cells at different scenarios, such as temperature variations or when the circuits have suffered aging-related degradation. In this work, the experimental results obtained for a new method to classify the cells according to their power-up strength are presented and discussed. The method overcomes some of the drawbacks in previously reported methods. In particular, it is experimentally demonstrated that the technique presented in this work outstands in selecting SRAM cells that are very robust against circuit degradation and temperature variations, which ultimately translates into the construction of reliable SRAM-based PUFs.

A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · Integration, vol. 72, pp 13-20, 2020
resumen      doi      pdf

In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator.

Flexible Setup for the Measurement of CMOS Time-Dependent Variability with Array-Based Integrated Circuits
J. Diaz-Fortuny, P. Saraza-Canflanca, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, F.V. Fernandez and M. Nafria
Journal Paper · IEEE Transactions on Instrumentation and Measurement, vol. 69, no. 2, pp 853-864, 2020
resumen      doi      pdf

This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS transistors using array-based integrated circuits (ICs), through which a better understanding of CMOS reliability could be attained. This setup addresses the issues that come with the need for a trustworthy statistical characterization of these effects: testing a very large number of devices accurately but, also, in a timely manner. The setup consists of software and hardware components that provide a user-friendly interface to perform the statistical characterization of CMOS transistors. Five different electrical tests, comprehending time-zero and time-dependent variability effects, can be carried out. Test preparation is, with the described setup, reduced to a few seconds. Moreover, smart parallelization techniques allow reducing the typically time-consuming aging characterization from months to days or even hours. The scope of this paper thus encompasses the methodology and practice of measurement of CMOS time-dependent variability, as well as the development of appropriate measurement systems and components used in efficiently generating and acquiring the necessary electrical signals.

A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors
P. Saraza-Canflanca, J. Martin-Martinez, R. Castro-Lopez, E. Roca, R. Rodriguez, M. Nafria and F.V. Fernandez
Journal Paper · Microelectronic Engineering, vol. 215, article 111004, 2019
resumen      doi      pdf

Random Telegraph Noise (RTN) has attracted increasing interest in the last years. This phenomenon introduces variability in the electrical properties of transistors, in particular in deeply-scaled CMOS technologies, which can cause performance degradation in circuits. In this work, the dependence of RTN parameters, namely current jump amplitude and emission and capture time constants, on the bias conditions, both VG and VD, has been studied on a set of devices, with a high granularity in a broad voltage range. The results obtained for the VG dependences corroborate previous works, but suggest a unique trend for all the devices in a VG range that goes from the near-threshold region up to voltages over the nominal operation bias. However, different trends have been observed in the parameters dependence for the case of VD. From the experimental data, the probabilities of occupation of the associated defects have been evaluated, pointing out large device-to-device dispersion in the VD dependences.

Congresos


A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation
P. Saraza-Canflanca, J. Martin-Martinez, E. Roca, R. Castro-Lopez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2022
resumen     

This paper addresses the automated parameter extraction of Random Telegraph Noise models in nanoscale fieldeffect transistors. Unlike conventional approaches based on complex extraction of current levels and timing of trapping/detrapping events from individual defects in current traces, the proposed approach performs a simple processing of current traces. A smart optimization problem formulation allows to get distribution functions of the amplitude of the current shifts and of the number of active defects vs. time.

A Smart SRAM-Cell Array for the Experimental Study of Variability Phenomena in CMOS Technologies
P. Saraza-Canflanca, H. Carrasco-Lopez, A. Santana-Andreo, J. Diaz-Fortuny, R. Castro, E. Roca and F.V. Fernandez
Conference · IEEE International Reliability Physics Symposium IRPS 2022
resumen     

Time-Dependent Variability phenomena can have a considerable impact on circuit performance, especially for deeply-scaled technologies. To account for this, these phenomena need to be characterized and modelled. Such characterization is often performed at the device level first. Then, the model extracted from such characterization should be validated at the circuit level. To this end, this paper presents a novel chip fabricated in a 65-nm technology that contains an array of 6T SRAM cells. This chip includes some features that make it especially adequate for the characterization of the impact of Time-Dependent Variability phenomena. To demonstrate this adequacy, different tests have been performed to evaluate how Time-Dependent Variability phenomena impact several relevant performance metrics of SRAM cells.

Simulating the impact of Random Telegraph Noise on integrated circuits
P. Saraza-Canflanca, E. Camacho-Ruiz, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2021
resumen     

This paper addresses the statistical simulation of integrated circuits affected by Random Telegraph Noise (RTN). For that, the statistical distributions of the parameters of a defectcentric model for RTN are experimentally determined from a purposely designed integrated circuit with CMOS transistor arrays. Then, these distribution functions are used in a statistical simulation methodology that, taking into account transistor sizes, biasing conditions and time, can assess the impact of RTN in the performance of an integrated circuit. Simulation results of a simple circuit are shown together with experimental measurements of a circuit with the same characteristics implemented in the same CMOS technology.

Dealing with hierarchical partitioning in bottom-up design methodologies
F. Passos, P. Saraza-Canflanca, R. Castro Lopez, E. Roca and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2021
resumen     

This paper deals with the expertise blend of circuit design and design methodology development required to successfully address hierarchical partitioning of analog, radio-frequency and mm-Wave circuits in bottom-up design methodologies. A set of guidelines is discussed for the optimal configuration of the bottom-up process that yields sound design results are obtained. These guidelines are demonstrated with two case studies.

A study of SRAM PUFs reliability using the Static Noise Margin
E. Camacho-Ruiz, P. Saraza-Canflanca, R. Castro-Lopez, E. Roca, P. Brox and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2021
resumen     

The use of SRAM cells as key elements in a Physical Unclonable Function (PUF) has been widely reported. An essential characteristic the SRAM cell must feature for a reliable PUF is stability, i.e., it must power up consistently to the same value. Different techniques to measure this stability (and thus improve the PUF reliability) have been reported, such as the Multiple Evaluation method and, more recently, the Maximum Trip Supply Voltage method, the latter using the Data Retention Voltage (DRV) concept. While experimental results have been reported, this paper sheds some light from a different perspective: simulation. In this sense, and using wellknown concepts like butterfly curves, static noise margin and voltage-transfer curves, an analysis is provided on why and how stability originates in the cell. Moreover, by simulating the butterfly curve behavior when the supply voltage scales down, it is possible to correlate DRV with stability, thereby confirming the correct theoretical foundation of the MTSV method.

Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock
M. Nafria, J. Diaz-Fortuny, P. Saraza-Canflanca, J. Martin-Martinez, E. Roca, R. Castro-Lopez, R. Rodriguez, P. Martin-Lloret, A. Toro-Frias, D. Mateo, E. Barajas, X. Aragones and F.V. Fernandez
Conference · IEEE Latin America Electron Devices Conference LAEDC 2021
resumen     

The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars of this approach are described and illustrated through examples.

Improving the reliability of SRAM-based PUFs under varying conditions
P. Sarazá-Canflanca, H. Carrasco-López, P. Brox, R. Castro-López, E. Roca and F.V. Fernández
Conference · Conference on Design of Circuits and Integrated Systems DCIS 2020
resumen     

Abstract not available

Improving the reliability of SRAM-based PUFs in the presence of aging
P. Saraza-Canflanca, H. Carrasco-Lopez, P. Brox, R. Castro-Lopez, E. Roca and F.V. Fernandez
Conference · Design and Technology of Integrated Systems in Nanoscale Era DTIS 2020
resumen     

The utilization of power-up values in SRAM cells for the generation of PUF responses has been widely studied. It is important that the cells used for this purpose are stable, i.e., the cells must have a strong tendency towards one of the two possible values (‘ ‘0 ’ or ‘1 ’). Some methods have been presented that aim at increasing the reliability of this type of PUFs by selecting the strongest cells among a set of them. However, they feature some drawbacks, either in terms of their practical feasibility or of their actual effectiveness selecting the strongest cells in different scenarios. In this work, the experimental results obtained for a new method to classify the cells according to their strength are presented and discussed. The technique overcomes some of the drawbacks that the previous methods present. In particular, it is experimentally demonstrated that the technique presented in this work outstands in selecting SRAM cells that are very robust against circuit degradation, which translates into the construction of reliable SRAM-based PUFs.

TiDeVa: A Toolbox for the Automated and Robust Analysis of Time-Dependent Variability at Transistor Level
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V.Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2019
resumen     

Time-Dependent Variability has attracted increasing interest in the last years. In particular, phenomena such as Bias Temperature Instability, Hot Carrier Injection and Random Telegraph Noise can have a large impact on circuit reliability, and must be therefore characterized and modeled. For technologies in the nanometer range, these phenomena reveal a stochastic behavior and must be characterized in a massive manner, with enormous amounts of data being generated in each measurement. In this work, a novel tool with a user-friendly interface, which allows the robust and fullyautomated parameter extraction for RTN, BTI and HCI experiments, is presented.

Generation of Lifetime-Aware Pareto-Optimal Fronts Using a Stochastic Reliability Simulator
A. Toro-Frias, P. Saraza-Canflanca, F. Passos, P. Martin-Lloret, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Design Automation and Test in Europe DATE 2019
resumen     

Process variability and time-dependent variability have become major concerns in deeply-scaled technologies. Two of the most important time-dependent variability phenomena are Bias Temperature Instability (BTI) and Hot-Carrier Injection (HCI), which can critically shorten the lifetime of circuits. Both BTI and HCI reveal a discrete and stochastic behavior in the nanometer scale, and, while process variability has been extensively treated, there is a lack of design methodologies that address the joint impact of these two phenomena on circuits. In this work, an automated and timeefficient design methodology that takes into account both process and time-dependent variability is presented. This methodology is based on the utilization of lifetime-aware Pareto-Optimal Fronts (POFs). The POFs are generated with a multi-objective optimization algorithm linked to a stochastic simulator. Both the optimization algorithm and the simulator have been specifically tailored to reduce the computational cost of the accurate evaluation of the impact on a circuit of both sources of variability.

New method for the automated massive characterization of Bias Temperature Instability in CMOS transistors
P. Saraza-Canflanca, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria, F.V. Fernandez
Conference · Design Automation and Test in Europe DATE 2019
resumen     

Bias Temperature Instability has become a critical issue for circuit reliability. This phenomenon has been found to have a stochastic and discrete nature in nanometerscale CMOS technologies. To account for this random nature, massive experimental characterization is necessary so that the extracted model parameters are accurate enough. However, there is a lack of automated analysis tools for the extraction of the BTI parameters from the extensive amount of generated data in those massive characterization tests. In this paper, a novel algorithm that allows the precise and fully automated parameter extraction from experimental BTI recovery current traces is presented. This algorithm is based on the Maximum Likelihood Estimation principles, and is able to extract, in a robust and exact manner, the threshold voltage shifts and emission times associated to oxide trap emissions during BTI recovery, required to properly model the phenomenon.

A new time efficient methodology for the massive characterization of RTN in CMOS devices
G. Pedreira, J. Martin-Martinez, J. Diaz-Fortuny, P. Saraza-Canflanca, R. Rodriguez, R. Castro-Lopez, E. Roca, F.V. Fernandez and M. Nafria
Conference · IEEE International Reliability Physics Symposium IRPS 2019
resumen     

Abstract not avaliable

Design considerations of an SRAM array for the statistical validation of time-dependent variability models
P. Saraza-Canflanca, D. Malagon, F. Passos, A. Toro, J. Nuñez, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

Modeling and characterization of time-dependent variability phenomena as well as the simulation of their impact on circuit operation have attracted considerable efforts. This paper digs into the validation of compact models and simulation tools in the real operation of circuits. One of the most popular blocks, the 6T SRAM, is proposed for this purpose and a test chip containing an SRAM array is designed. The array allows individual access to each SRAM cell, the application of accelerated aging tests as well as the characterization of common performance metrics.

A Model Parameter Extraction Methodology Including Time-dependent Variability for Circuit Reliability Simulation
J. Diaz-Fortuny, P. Saraza-Canflanca, A. Toro-Frias, R. Castro-Lopez, J. Martin-Martinez, E. Roca, R. Rodriguez, F.V. Fernandez and M. Nafria
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

In current CMOS advanced technology nodes, accurate extraction of transistor parameters affected by timedependent variability, like threshold voltage (Vth) and mobility (μ), has become a critical issue for both analog and digital circuit simulation. In this work, a precise VTH0 and U0 BSIM parameters extraction methodology is presented, together with a straightforward IDS to VTH0 shift conversion, to allow the complete study of aging device effects for reliability circuit

Automated massive RTN characterization using a transistor array chip
P. Saraza-Canflanca, J. Diaz-Fortuny, A. Toro-Frias, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria and F.V. Fernandez
Conference · Int. Conf. on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design SMACD 2018
resumen     

In this work, a CMOS transistor array for the massive measurement of random telegraph noise (RTN), together with a dedicated experimental setup, is presented. The array chip, called ENDURANCE, allows the massive characterization of the RTN parameters needed for a complete understanding of the phenomenon. Additionally, some experimental results are presented that demonstrate the convenience of the setup.

Libros


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Capítulos de libros


Modeling of variability and reliability in analog circuits
J. Martin-Martinez, J. Diaz-Fortuny, A. Toro-Frias, P. Martin-Lloret, P. Saraza-Canflanca, R. Castro-Lopez, R. Rodriguez, E. Roca, F.V. Fernandez and M. Nafria
Book Chapter · Modelling Methodologies in Analogue Integrated Circuit Design, pp 179-206, 2020
resumen      doi      

This chapter is divided into four sections. In Section 8.1, the probabilistic defect occupancy (PDO) model, a physics-based compact model, is introduced, which can be easily implemented into circuit simulators. Section 8.2 describes a purposely designed IC which contains suitable test structures, together with a full instrumentation system for the massive characterization of TZV and TDV in CMOS transistors, from which aging of the technology under study can be statistically evaluated. Section 8.3 is devoted to a smart methodology, which allows extracting the statistical distributions of the main physical parameters related to TDV from the measurements performed with the instrumentation system. Finally, Section 8.4 describes CASE, a new reliability simulation tool that accounts for TZV and TDV in analog circuits, covering important aspects, such as the device degradation evaluation, by means of stochastic modeling and the link between the device biasing and its degradation. As an example, the shifts of the performance of a Miller operational amplifier related to the device TDV is evaluated using CASE. Finally, in Section 8.5 the main conclusions are summarized.

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