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Se buscan candidatos para un contrato de Titulado Superior en el área de Tecnología Electrónica y de Comunicaciones, asociado al Proyecto de Investigación MARAGDA (Aproximación multi-nivel al diseño orientado a la fiabilidad de circuitos integrados analógicos y digitales).
♦ Presentación de libros de divulgación científica
Acto de presentación de los libros "Del electrón al chip" de Gloria Huertas, Luisa Huertas y José Luis Huertas y "La Nanotecnología: explorando un cosmos en miniatura" de Antonio José Acosta.
Casa de la Ciencia del CSIC en Sevilla.
19 Mayo 2016
♦ Visitas al IMSE
Escuela Politécnica Superior. Universidad de Sevilla.
18 Mayo 2016
¿Qué hacemos en el Instituto de Microelectrónica de Sevilla?
Santiago Sánchez Solano. Director del IMSE.
El Instituto de Microelectrónica de Sevilla participa en la XIV Feria de la Ciencia con el proyecto "El Mundo de los Chips: Ciencia e Ingenio en el Instituto de Microelectrónica de Sevilla".
Palacio de Exposiciones y Congresos de Sevilla, FIBES
5, 6 y 7 de Mayo de 2016
♦ IEEE Circuits and Systems Society
El investigador del IMSE-CNM Dr. Manuel Delgado Restituto ha sido nombrado Vicepresidente de Publicaciones de la Sociedad de Circuitos y Sistemas de IEEE para el año 2016.

Nuevo sitio web de la Biblioteca Campus Cartuja

14ª Feria de la Ciencia
5, 6 y 7 de Mayo

Oferta de servicios basados en el sistema automático de test ATE Agilent 93000

El Mundo de los Chips

El IMSE en los medios

Tríptico informativo

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El IMSE en Digital.CSIC

Últimas publicaciones
La Nanotecnología: explorando un cosmos en miniatura  »
Abstract not available

Book - Colección: Un paseo por el cosmos, 2016 RBA EDITORES

A.J. Acosta Jiménez
Circuit Realization of the Synchronization of Two Chaotic Oscillators with Optimized Maximum Lyapunov Exponent  »
The modeling, simulation and circuit realization of the synchronization of two optimized multi-scroll chaotic oscillators is described herein. The case of study is the master-slave synchronization of two multi-scroll chaotic oscillators generating four to seven scrolls, based on saturated function series. The maximum Lyapunov exponent (MLE) of the chaotic oscillator is optimized by applying meta-heuristics. We show the behavior on the synchronization for chaotic oscillators with low and high MLEs, while the synchronization is performed by generalized Hamiltonian forms and observer approach from nonlinear control theory. Numerical simulation results are given for the chaotic oscillators with and without optimized MLEs, and for their master-slave synchronization. Finally, we show the good agreement between theoretical results, SPICE simulations and the experimental results when the whole synchronized system is implemented with commercially available operational amplifiers.

Book Chapter - Advances in Chaos Theory and Intelligent Control. A.T. Azar, S. Vaidyanathan (Eds.), 2016 SPRINGER

ISBN: 978-3-319-30338-3    
V.H. Carbajal-Gómez, E. Tlelo-Cuautle and F.V. Fernández
Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons  »
The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the charge collection efficiency (CCE) vs bias voltages have been analyzed using a modified drift-diffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier's lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.

Journal Paper - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 372, pp 143-150, 2016 ELSEVIER
DOI: 10.1016/j.nimb.2015.12.029    ISSN: 0168-583X    » doi
J. Garcia Lopez, M.C. Jimenez-Ramos, M. Rodriguez-Ramos, J. Ceballos, F. Linez and J. Raisanen
A Proposal for Yield Improvement with Power Tradeoffs in CMOS LNAs  »
This paper investigates the capability of an architecture with digitally controllable gain and power consumption, for mitigating the effects of process variations on CMOS Low-Noise Amplifiers (LNAs). A 130-nm 1.2-V LNA with the proposed architecture is designed, based on the analysis of variability in LNAs with a traditional architecture under different biasing currents conditions, and the corresponding effects in the performance of a complete receiver context. Two different adjusting strategies are evaluated, which could be implemented with already reported Built-in Self-Test (BIST) circuits. Results show that the proposed architecture allows yield enhancement with low-power operation compared to traditional LNAs.

Journal Paper - IEEE Latin America Transactions, vol. 14, no. 1, pp. 13-19, 2016 IEEE
ISSN: 1548-0992    
J.L. González, J.C. Cruz, R.L. Moreno and D. Vázquez
Energy-Aware Low-Power CMOS LNA with Process-Variations Management  »
A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, that is, to improve LNA's radiofrequency performance at extreme communication-channel conditions and/or to counteract the effect of process, voltage, and temperature variations. The proposed design leads to significant power saving when a relaxed operation is acceptable. The LNA is implemented in a 130 nm 1.2 V CMOS technology for a 2.4 GHz IEEE-802.15.4 application. Simulated LNA performance (taking into account the worst cases under process variations) is comparable to recently published works.

Journal Paper - Active and Passive Electronic Components, vol. 2016, Article ID 8351406, 2016 HINDAWI
DOI: 10.1155/2016/8351406    ISSN: 1563-5031    » doi
J.L. González, R.L. Moreno, J.C. Cruz and D. Vázquez

Webs relacionadas con el IMSE
Parque Científico y Tecnológico Cartuja, Calle Américo Vespucio s/n, 41092, Sevilla. Teléfono: 954466666, Fax: 954466600
domingo, 29 de mayo de 2016
Última actualización: 23.05.2016
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