The growing demand for new and more complex wireless communication devices is pushing continuous innovation in the design of Radio Frequency Integrated Circuits. New and stronger performance requirements are to be met in shorter times-to-market, using technologies which are not always RF-friendly, making the design of these circuits a challenging job.
Miniaturization and cost have driven CMOS technologies as attractive candidates for the design of RF integrated circuits. Furthermore, the scaling of these technologies down to the nanometric regime has pushed their frequencies of operation well into the millimeter-wave region. Currently, CMOS coexists with other high-performance technologies, like SiGe, providing the RF designer with a wide catalog of alternatives for the optimal system design considering a variety of aspects like size, cost, power consumption, performance, etc. .
One the most important challenges of RF design is the lack of good simulation and modeling tools that can combine the electrical characteristics of the different devices (active and passive) with their electromagnetic properties when operating at GHz frequencies. The development of new simulation methodologies and mathematical modeling for RFIC are crucial aspects for designing RF circuits that fulfill the requirements of the communication standards and effectively reduce the design time.
Journal Paper -
Integration, the VLSI Journal, vol. 52, pp. 183-184, 2016 ELSEVIER
DOI: 10.1016/j.vlsi.2015.11.001 ISSN: 0167-9260 » doi