Enhancing the performance of HfO2-based memristors with a thin Al2O3 layer: a comparative study M. Shooshtari, T. Serrano Gotarredona and B. Linares-Barranco Journal Paper · Journal of Physics D: Applied Physics, vol. 58, no. 45, 2025 abstractdoi
The resistive switching behavior of memristors is pivotal for advancing next-generation non-volatile memory and neuromorphic computing devices. In this study, we investigate the impact of incorporating a thin Al2O3 interfacial layer into HfO2-based memristors by fabricating and comparing two device architectures: W/HfO2/Ti/TiN and W/Al2O3/HfO2/Ti/TiN. The Al2O3 layer significantly influences device behavior by altering the electric field distribution and suppressing oxygen vacancy diffusion, leading to more confined and stable filament formation. While the dual-layer structure exhibits higher forming voltages due to increased dlectric thickness and the insulating properties of Al2O3, it also demonstrates improved switching uniformity, reduced resistance variability, and enhanced cycle-to-cycle endurance. Variability, quantified as resistance state variation over repeated cycles, was notably improved in the Al2O3-based device, with resistance fluctuations reduced by nearly 50% compared to the single-layer HfO2 device. These results highlight the role of interfacial engineering in improving memristor stability and reliability, offering valuable design strategies for future memory and neuromorphic computing systems.
